Method of forming trench isolation in a semiconductor device

A method of making an integrated circuit, the method comprising:

• forming a trench in a semiconductor material of a wafer;
• filling the trench with dielectric material;
• heating the wafer at a temperature of at least 1100 C for at least 10 minutes in an ambient gas including argon after the filling the trench with dielectric material;
• wherein a trench isolation includes the dielectric material.

A method of forming an integrated circuit, the method comprising:

• forming a trench in a semiconductor layer, the semiconductor layer overlying an insulator layer of a semiconductor on insulator (SOI) wafer, wherein the trench extends at least to the insulator layer;
• filling the trench with dielectric material;
• heating the wafer at a temperature of at least 1100 C for at least 10 minutes after the filling the trench with dielectric material;
• planarizing the wafer, wherein the dielectric material remains exposed after the planarization;
• wherein a trench isolation includes the dielectric material;
• forming a transistor including an active region in the semiconductor layer adjacent to the trench isolation.