Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors

A tungsten/nitrogen-containing material forming method comprising:

• depositing a first layer comprising tungsten and nitrogen over a substrate, the first layer being substantially free of defects;
• ceasing the depositing, exposing the substantially defect-free first layer to a nitrogen-containing plasma, and densifying the first layer in comparison to the substantially defect-free first layer;
• and
• after the densifying, forming a second layer comprising tungsten and nitrogen over the densified first layer.

A tungsten/nitrogen-containing device forming method comprising:

• forming a first electrical node of a capacitor;
• forming a dielectric layer over the first electrical node;
• forming a second electrical node of the capacitor separated from the first electrical node by the dielectric layer;
• and
• at least one of the first and second electrical nodes comprising a tungsten/nitrogen-containing material formed at least by:
• depositing a first layer comprising tungsten and nitrogen, the first layer being substantially free of defects;
• ceasing the depositing, exposing the substantially defect-free first layer to a nitrogen-containing plasma, and densifying the first layer in comparison to the substantially defect-free first layer;
• and
• after the densifying, forming a second layer comprising tungsten and nitrogen over the densified first layer.