Dual wavelength thermal flux laser anneal
AssigneeApplied Materials, Inc.
InventorsDean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Ranish
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AssigneeApplied Materials, Inc.
InventorsDean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Ranish
Estimating the term…
A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
A thermal processing system, comprising:
A thermal processing system, comprising:
A method of thermally treating a substrate comprising a semiconductor having a bandgap energy, comprising the steps of:
Dependencies are inferred from the claim text.