Methods of fabricating nonvolatile memory devices and related devices

A method of fabricating a nonvolatile memory device, the method comprising:

• forming a gate insulating layer on a substrate, the substrate having a memory region and a well contact region;
• patterning the gate insulating layer to define an opening therein, the opening exposing at least a portion of the well contact region of the substrate;
• forming a first conductive layer on the gate insulating layer;
• forming an isolation layer on the substrate, the isolation layer defining and active region;
• and
• selectively etching the isolation layer to expose at least a portion of a side surface of the first conductive layer.

A nonvolatile memory device comprising:

• a substrate;
• an integrated circuit substrate having a memory region and a well contact region;
• an isolation layer on the substrate that defines an active region of the substrate;
• and
• a gate insulating layer on the substrate, the gate insulating layer defining an opening therein, the opening exposing at least a portion of the well contact region of the substrate and acting as a charge pathway for charges generated during a subsequent etch of the isolation layer.

A nonvolatile memory device comprising:

• an integrated circuit substrate, the substrate having a memory region and a well contact region;
• a gate insulating layer on the substrate;
• and
• a gate electrode formed on the gate insulating layer, the gate electrode including a first conductive layer pattern, a dielectric layer pattern and a second conductive layer pattern sequentially stacked, wherein a concavity is formed on the substrate disposed on an outside of the stacked gate electrode.