Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsSoichi Yamazaki, Koji Yamakawa
Life of this patent
Estimating the term…
Abstract
According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, O is an oxygen element, and x>0), and a contact connected to the upper electrode, wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.
Claims18
A semiconductor device comprising:
- a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, O is an oxygen element, and x>0);
- and
- a contact connected to the upper electrode,
- wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.
A semiconductor device fabrication method comprising:
- forming a capacitor above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, O is an oxygen element, and x>0);
- depositing an interlayer dielectric film on the capacitor;
- forming a contact hole reaching the upper electrode through the interlayer dielectric film, such that a first film thickness of the electrode film immediately below the contact hole is smaller than a second film thickness of the electrode film in the other portion;
- and
- annealing the capacitor after the contact hole is formed.
Dependencies are inferred from the claim text.