Self-aligned contact for silicon-on-insulator devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Liang Yang, Yee-Chia Yeo, Horng-Huei Tseng, Chenming Hu
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Abstract
A method for forming a self-aligned contact to an ultra-thin body transistor first providing an ultra-thin body transistor with source and drain regions operated by a gate stack; forming a contact spacer on the gate stack; forming a passivation layer overlying the transistor; forming a contact hole in the passivation layer exposing the contact spacer and the source/drain regions; filling the contact hole with an electrically conductive material; and establishing electrical communication with the source/drain region.
Claims34
A method for forming a self-aligned contact to an ultra-thin body transistor comprising the steps of:
- providing an ultra-thin body transistor comprising a source region and a drain region separated by a gate stack;
- forming a contact spacer on said gate stack;
- forming a passivation layer overlying said ultra-thin body transistor;
- forming a contact hole in said passivation layer exposing said contact spacer and said source/drain region;
- and
- filling said contact hole with an electrically conductive material for establishing electrical communication with said source/drain region.
18-37. (canceled)
A self-aligned contact device comprising:
- an ultra-thin body transistor comprising a source region and a drain region separated by a gate stack;
- a contact spacer formed on the side of the gate stack;
- and an electrically conductive contact in contact with said contact spacer and in electrical communication with said source/drain region.
50-52. (canceled)
55-74. (canceled)
Dependencies are inferred from the claim text.