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US 2006/0234436 A1Published application
Method of forming a semiconductor device having a high-k dielectric
OwnerHsing Tseng, Olubunmi Adetutu +1inventors
InventorsHsing Tseng, Olubunmi Adetutu, David Gilmer
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Abstract
A metal oxide is formed over a high quality oxide which has been deposited over a substrate. An anneal drives a reaction to form a metal oxysilicon nitride layer which is then used as a part of a gate stack. The novel integration scheme allows for improved scalablity of devices as well as improved leakage currents.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- forming a metal-containing material over the dielectric layer, wherein the metal-containing material comprises an element;
- incorporating the element from the metal-containing material into the dielectric layer;
- and
- removing at least a portion of the metal-containing material.
3 more elements
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- forming a metal and nitrogen-containing material over the dielectric layer, wherein the material comprises a first element;
- and
- incorporating the first element from the metal and nitrogen-containing material into the dielectric layer.
2 more elements
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- forming a material over the dielectric layer, wherein the material comprises a metal;
- incorporating the metal from the material into the dielectric layer;
- and
- removing at least a portion of the metal-containing material.
3 more elements
Dependencies are inferred from the claim text.