PECVD nitride film
AssigneeFreescale Semiconductor, Inc.
InventorStan Filipiak
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Abstract
A method for forming a semiconductor device is provided. In accordance with the method, a substrate (103) is provided, and a dielectric material (123) is formed on the substrate through plasma enhanced chemical vapor deposition (PECVD). The PECVD is conducted at a temperature of greater than 300° C., and utilizes an atmosphere comprising nitrogen, silane, ammonia, and helium.
Claims20
A method for making a semiconductor device, comprising:
- providing a substrate;
- and
- forming a dielectric material on the substrate through plasma enhanced chemical vapor deposition (PECVD), wherein the PECVD is conducted at a temperature greater than 300° C. and utilizes an atmosphere comprising nitrogen, silane, ammonia, and helium.
The method of 8, wherein the spacing between the substrate and the first electrode is within the range of about 220 mils to 300 mils.
The method of 8, wherein the spacing between the substrate and the first electrode is within the range of about 240 mils to 280 mils.
Dependencies are inferred from the claim text.