Transistors and methods of manufacture thereof
AssigneesInfineon Technologies AG, Intel Corporation
InventorsHongfa Luan, Prashant Majhi
Life of this patent
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Abstract
Transistors and methods of manufacture thereof are disclosed. A workpiece is provided, a gate dielectric is formed over the workpiece, and a gate is formed over the gate dielectric by exposing the workpiece to a precursor of hafnium (Hf) and a precursor of silicon (Si). The gate comprises a layer of a combination of Hf and Si. The layer of the combination of Hf and Si of the gate establishes the threshold voltage Vt of the transistor. The transistor may comprise a single NMOS transistor or an NMOS transistor of a CMOS device.
Claims30
A transistor, comprising:
- a gate comprising a layer of a combination of hafnium (Hf) and silicon (Si), the gate comprising a first thickness, wherein the ratio of the amount of Hf and the amount of Si are substantially the same through the entire first thickness of the gate.
A complimentary metal oxide semiconductor (CMOS) device, comprising
- a negative channel metal oxide semiconductor (NMOS) transistor, including a first gate comprising a layer of a combination of hafnium (Hf) and silicon (Si), the first gate comprising a first thickness, wherein the amount of Hf and the amount of Si are substantially the same through the entire first thickness of the first gate;
- and
- a positive channel metal oxide semiconductor (PMOS) transistor including a second gate comprised of a different material than the first gate of the NMOS transistor.
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece;
- forming a gate dielectric material over the workpiece;
- exposing the workpiece to a precursor of hafnium (Hf) and a precursor of silicon (Si) to form a gate material over the gate dielectric material, the gate material comprising a layer of a combination of Hf and Si;
- patterning the gate material and the gate dielectric material to form a gate and a gate dielectric of a transistor, respectively;
- and
- forming a source region and a drain region in the workpiece proximate the gate dielectric.
Dependencies are inferred from the claim text.