Doping of semiconductor fin devices

A method of forming a semiconductor-on-insulator chip, the method comprising:

• providing a substrate with an insulator layer formed thereon;
• forming a plurality of multiple-gate transistors on the insulator layer, wherein at least some of the multiple-gate transistors are formed by:
• forming a semiconductor fin having an orientation in a first direction;
• forming a gate electrode formed adjacent a channel region portion of the semiconductor fin, the gate electrode having a gate length of less than about 30 nm;
• forming a source region and a drain region within the semiconductor fin such that the channel region is disposed between the source region and the drain region, the channel extending along a first sidewall surface of the fin, across a top surface of the fin and along a second sidewall surface of the fin, wherein the channel region is doped to a first conductivity type and the source and drain regions are doped to a second conductivity type that is different than the first conductivity type, wherein the source and drain regions are doped by implanting ions at an angle between 26 degrees and about 63 degrees with respect to the normal of a top surface of the insulator layer.

A method of doping semiconductor fins of multiple-gate transistors, the method comprising:

• providing a semiconductor structure comprising of a plurality of semiconductor fins overlying an insulator layer, each fin having a gate dielectric overlying a portion of that semiconductor fin, and a gate electrode overlying said gate dielectric, each of the semiconductor fins having a top surface, a first sidewall surface, and a second sidewall surface;
• implanting dopant ions at an angle α with respect to the normal of the top surface of each of the semiconductor fins to dope a portion of the semiconductor fins, the angle α having a magnitude between 26 degrees and 63 degrees;
• and
• implanting dopant ions at an angle β with respect to the normal of the top surface of each of the semiconductor fins to dope a portion of the semiconductor fins, the angle β having a magnitude between 26 degrees and 63 degrees.