Methods of implementing and enhanced silicon-on-insulator (soi) box structures
AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, Carl Radens, William Tonti, Richard Williams
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Abstract
Enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures and methods are provided for implementing enhanced SOI BOX structures. An oxygen implant step is performed from a backside into a thinned silicon substrate layer. An anneal step forms thick buried oxide (BOX) regions from oxygen implants in the silicon substrate layer. The oxygen implant step forms an isolated region near the oxygen implants. A backside implant step selectively dopes the isolated region for forming a backgate for an SOI device being formed including a selected one of anti-fuse (AF) devices, and SOI transistors including PFET and NFET devices.
Claims20
A method for implementing enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures comprising the steps of:
- providing a thin buried oxide (BOX) layer under a device channel in a silicon substrate layer and a pad oxide layer carried by the active layer;
- thinning the silicon substrate layer;
- performing an oxygen implant step from the backside into the thinned silicon substrate layer;
- and
- forming thick buried oxide (BOX) regions from oxygen implants in the silicon substrate layer.
A silicon-on-insulator (SOI) buried oxide (BOX) structure comprising:
- a thin buried oxide (BOX) layer;
- an active channel region over said thin buried oxide (BOX) layer;
- a pair of spaced apart thick buried oxide (BOX) regions;
- an isolated region between said pair of spaced apart thick buried oxide (BOX) regions;
- said isolated region being selectively doped for forming a backgate for an SOI device to be formed.
Dependencies are inferred from the claim text.