Method of manufacture of a PCRAM memory cell
AssigneeMicron Technology, Inc.
InventorsJohn Moore, Kristy Campbell, Terry Gilton
Life of this patent
Estimating the term…
Abstract
The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
Claims11
1-87. (canceled)
A processor-based system, comprising:
- a processor;
- and
- a memory circuit connected to said processor, said memory circuit including a resistance variable memory element comprising:
- a first electrode;
- an insulating layer having an opening in communication with said first electrode;
- a light irradiated silver-germanium-selenium glass formed at least within said opening;
- and
- a second electrode formed over said insulating layer and said silver-germanium-selenium glass.
The system of claim 84 wherein said silver-germanium-selenium glass has a germanium-selenium stoichiometry of between about Ge20Se80 to about Ge33Se67.
A processor-based system, comprising:
- a processor;
- and
- a memory circuit connected to said processor, said memory circuit including a resistance variable memory element comprising:
- a first electrode;
- an insulating layer having an opening in communication with said first electrode;
- a light irradiated silver-germanium-selenium glass formed at least within said opening;
- a silver-selenide layer formed over and in electrical communication with said silver-germanium-selenium glass;
- a resistance variable material formed over and in electrical communication with said silver-selenide layer;
- and
- a second electrode formed over said resistance variable material and in electrical communication with said resistance variable material.
97-109. (canceled)
Dependencies are inferred from the claim text.