System for providing a redistribution metal layer in an integrated circuit

A method for fabricating an integrated circuit comprising the steps of:

• fabricating a first portion of an active circuit area and an associated metal pad on a base substrate, said first portion of said active circuit area comprising a next to last metal layer;
• depositing a passivation layer on said first portion of said active circuit area and on said metal pad;
• etching at least one via through said passivation layer to said metal pad;
• etching a metal layer pattern into said passivation layer;
• depositing a last metal layer onto said metal layer pattern on said passivation layer to form a redistribution metal layer;
• and
• depositing said last metal layer onto said first portion of said active circuit area to form a complete active circuit area.

An integrated circuit comprising:

• a first portion of an active circuit area and an associated metal pad on a base substrate, said first portion of said active circuit area comprising a next to last metal layer;
• a passivation layer deposited on said first portion of said active circuit area and on said metal pad;
• at least one via etched through said passivation layer to said metal pad;
• a metal layer pattern etched into said passivation layer;
• and
• a redistribution metal layer deposited on said metal layer pattern in said passivation layer, wherein said redistribution metal layer comprises a last metal layer, and wherein a portion of said last metal layer is deposited on said first portion of said active circuit area to form a complete active circuit area.