Method for fabricating a nonvolatile memory element and a nonvolatile memory element
AssigneeInfineon Technologies AG
InventorKlaus-Dieter Ufert
Life of this patent
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Abstract
In a method for fabricating a nonvolatile memory element a substrate is provided, a nanomask structure is fabricated on the substrate and a self-assembled monolayer of an organic memory molecule is grown on the substrate on a region not covered by the nanomask structure. A surface of the substrate is patterned by means of an electrode beam in order to form regions with organic memory molecules and regions without organic memory molecules and a top contact is applied to the monolayer formed from the organic memory molecules and the nanomask.
Claims11
A method for fabricating a nonvolatile memory element, comprising the steps of:
- providing a substrate;
- fabricating a nanomask structure on said substrate;
- growing a self-assembled monolayer of an organic memory molecule on said substrate on a region not covered by said nanomask structure;
- patterning a surface of said substrate by means of an electrode beam in order to form regions with organic memory molecules and regions without organic memory molecules;
- and
- applying a top contact to said monolayer formed from said organic memory molecules and said nanomask.
A nonvolatile memory element, comprising:
- a substrate and a nanomask structure applied on said substrate;
- said substrate comprising regions with organic memory molecules, regions without organic memory molecules, and a top contact.
Dependencies are inferred from the claim text.