Back to results
US 2006/0234411 A1Published application
Method of manufacturing nitride semiconductor light emitting diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsYung Ryu, Pil Kang
Life of this patent
Estimating the term…
Abstract
The invention relates to a method of manufacturing a semiconductor light emitting diode. In the method, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are formed sequentially on a substrate. Then, a nickel oxide (NiOx) film is directly deposited on the p-type semiconductor layer via reactive sputtering or reactive deposition in an oxidizing atmosphere. Also, a light transmissible conductive oxide layer is formed on the nickel oxide film.
Claims5
A method for manufacturing a nitride semiconductor light emitting diode comprising steps of:
- forming an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially on a substrate;
- directly depositing a nickel oxide (NiOx) film on the p-type semiconductor layer via reactive sputtering or reactive deposition in an oxidizing atmosphere;
- and
- forming a light transmissible conductive oxide layer on the nickel oxide film.
1 more element
Dependencies are inferred from the claim text.