Method for manufacturing vertical group III-nitride light emitting device

A method for manufacturing a vertical group III-nitride light emitting device comprising steps of:

• (i) forming an undoped GaN layer and an insulating layer sequentially on a basic substrate;
• (ii) selectively etching the insulating layer to form an insulating pattern on the undoped GaN layer;
• (iii) sequentially forming an n-doped AlxGayIn(1-x-y)N layer, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1, an active layer and a p-doped AlmGanIn(1-m-n)N layer, where 0≦m≦1, 0≦n≦1, 0≦m+n≦1 on the insulating pattern;
• (iv) forming a conductive substrate on the p-doped AlmGanIn(1-m-n)N layer;
• (v) removing the basic substrate, the undoped GaN layer and the insulating pattern to expose a rough pattern on the n-doped AlxGayIn(1-x-y)N layer;
• and
• (vi) forming an n-electrode on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.