Method of fabricating vertical structure nitride semiconductor light emitting device

A method of fabricating a vertical structure nitride semiconductor light emitting device, the method comprising:

• forming a light emitting structure including an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially disposed on a sapphire substrate;
• forming a metal layer having a plurality of patterns on the light emitting structure, the plurality of patterns of the metal layer each having a shape corresponding to a cross-sectional shape of a wanted final light emitting device and being spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed;
• dividing the light emitting structure into a plurality of individualized light emitting structures each having a size corresponding to a size of the final light emitting device by removing the light emitting structure below the exposed region between the plurality of patterns of the metal layer;
• separating the sapphire substrate from the light emitting structure by irradiating a laser beam onto a lower surface of the sapphire substrate, whereby the light emitting structure is completely separated in the size corresponding to the size of the final light emitting device;
• and
• forming a bonding pad on a surface of the n-type nitride semiconductor layer from which the sapphire substrate is removed.