Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same

Abstract

In a method of determining the quality of a semiconductor epitaxial crystal wafer having a buffer structure portion comprised of epitaxial layers the semiconductor epitaxial crystal wafer (S) is irradiated with pulsed exciting light (5A) to modulate an internal electric field of the buffer structure portion, the electric transport properties deriving from the crystal quality of the buffer structure of the semiconductor epitaxial crystal wafer (S) are predicted based on a spectral difference in reflectance in reflection probe light (3B) from the semiconductor epitaxial crystal wafer (S), to determine the crystal quality of the buffer structure portion. The crystal quality may also be determined based on electric field strength calculated from Franz-Keldysh oscillation originating in the semiconductor chemical compound of the buffer structure portion.

Dependencies are inferred from the claim text.