Functional organic thin film, organic thin-film transistor, and methods for producing these
OwnerMasatoshi Nakagawa, Hiroyuki Hanato +1inventors
InventorsMasatoshi Nakagawa, Hiroyuki Hanato, Toshihiro Tamura
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Abstract
A functional organic thin film comprising a network structure moiety 12 including silicon atoms and oxygen atoms and formed on a base 11; and a π-election conjugated system molecule 15 bonded to the network structure moiety 12 via an insulating molecule 14.
Claims24
A functional organic thin film comprising a network structure moiety including silicon atoms and oxygen atoms and formed on a base;
- and a π-electron conjugated system molecule bonded to the network structure moiety via an insulating molecule.
A method for preparing a functional organic thin film, comprising:
- a first step of forming a molecular thin film on a surface of a base, the molecular thin film having first functional groups periodically sticking out therefrom;
- and
- a second step of allowing second functional groups of organic compounds to react with the first functional groups of the molecular thin film or third functional groups formed by converting the first functional groups so that an organic thin film in which the organic compounds are bonded and periodically arranged is formed on the molecular thin film.
A method for preparing a functional organic thin film, comprising:
- a first step of bonding insulating molecules to a base via a network structure moiety formed of silicon atoms and oxygen atoms, the insulating molecules having first functional groups at the terminals, and
- a second step of allowing second functional groups located at the terminals of π-electron conjugated system molecules to react with the first functional groups of the insulating molecules or third functional groups formed by converting the first functional groups so that the π-electron conjugated system molecules is bonded to the insulating molecules.
An organic thin film transistor, comprising:
- a functional organic thin film formed on a surface of a substrate directly or indirectly;
- a gate electrode formed on the surface of the substrate indirectly or directly;
- source electrode and drain electrode formed on one surface of the functional organic thin film or on the other surface thereof;
- and
- a gate insulating film formed between the gate electrode and the source/drain electrodes,
- wherein the functional organic thin film has π-electron conjugated system molecules bonded to a network structure moiety via insulating molecules, the network structure moiety being formed of silicon atoms and oxygen atoms and formed on the base.
A manufacturing method of an organic thin film transistor, comprising:
- a step (A) for forming a functional organic thin film on a surface of a substrate directly or indirectly;
- a step (B) for forming a gate electrode on the surface of the substrate indirectly or directly;
- a step (C) for forming source electrode and drain electrode on one surface of the functional organic thin film or on the other surface thereof;
- and
- a step (D) for forming a gate insulating film between the gate electrode and the source/drain electrodes,
- wherein the step (A) includes a first step of bonding insulating molecules, having first functional groups at the terminals, to the base via a network structure moiety formed of silicon atoms and oxygen atoms and a second step of reacting second functional groups located at the terminals of π-electron conjugated system molecules to the first functional groups of the insulating molecules or third functional groups formed by converting the first functional groups so that the π-electron conjugated system molecules are bonded to the insulating molecules.
Dependencies are inferred from the claim text.