Multi-layered sputtered thin metal film recording medium comprising a tungsten seed layer and a chromium-titanium-tungsten intermediate layer
AssigneeImation Corp.
InventorMichael Hintz
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Abstract
A multi-layered sputtered thin metal film recording medium comprising a flexible substrate, a tungsten seed layer having a thickness of less than about 10 nm, an intermediate layer formed from a chromium-titanium-tungsten alloy, and a recording layer formed from a cobalt alloy. In one embodiment, the recording layer exhibits an in-plane coercivity of at least about 2800 Oe and all layers are deposited at ambient temperature.
Claims21
A multi-layered sputtered thin metal film flexible recording medium comprising a flexible polymeric substrate having formed on at least one surface thereof a tungsten seed layer having a thickness of less than about 10 nm, an intermediate layer formed from an alloy containing chromium, tungsten and an element selected from the group consisting of titanium, vanadium, manganese and tantalum, and a recording layer formed from a cobalt alloy.
A multi-layered thin-film longitudinal flexible recording medium according to claim 14, wherein the tungsten seed layer thickness is from about 4 nm to 6 nm.
A tape data storage system comprising a multilayered sputter-deposited thin metal film recording medium including a flexible polymeric substrate having deposited on at least one surface thereon at least a recording layer formed from a cobalt alloy, said layer having been grown atop an intermediate layer formed from a chromium-titanium-tungsten alloy, and a tungsten seed layer having a thickness of less than about 10 nm, said medium having an in-plane coercivity of at least about 2800 Oe.
Dependencies are inferred from the claim text.