Dielectric-layer-coated substrate and installation for production thereof

The substrate (1) as claimed in any one of the preceding claims, characterized in that the dielectric layer exposed to the ion beam has a refractive index greater than the index of a layer deposited without an ion beam.

The substrate (1) as claimed in any one of the preceding claims, characterized in that said layer has an index gradient adjusted according to parameters of the ion source layer.

The substrate (1) as claimed in any one of the preceding claims, characterized in that said dielectric layer is made of a metal oxide or silicon oxide, whether stoichiometric or nonstoichiometric, or made of a metal nitride or oxynitride or silicon nitride or oxynitride.

The substrate (1) as claimed in any one of the preceding claims, characterized in that said layer has an argon content of around 0.2 to 0.6 at %.

The substrate (1) as claimed in any one of the preceding claims, characterized in that said layer has an iron content of less than or equal to 3 at %.

The substrate (1) as claimed in any one of the preceding claims, characterized in that it is coated with a multilayer in which a silver layer is placed on top of said dielectric layer exposed to the ion beam.

A glazing assembly and especially a double-glazing or laminated glazing assembly, comprising at least one substrate (1) as claimed in any one of the preceding claims.

A process for deposition on a substrate (1), in which at least one dielectric thin-film layer is deposited on the substrate by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, in a sputtering chamber (2), with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that an ion beam is created in the sputtering chamber using a linear source and in that the refractive index of said dielectric layer exposed to the ion beam can be adjusted according to parameters of the ion source.

The installation (10) as claimed in the preceding claim, characterized in that a linear ion source is placed so as to direct an ion beam onto the substrate, especially along a direction making a nonzero angle, preferably an angle of 10 to 80°, with the surface of the substrate.