Loading patent…
OwnerTadahiro Ohmi, Akinobu Teramoto +1inventors
InventorsTadahiro Ohmi, Akinobu Teramoto, Sumio Sano
Estimating the term…
A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1×1011 (atoms/cm2). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.
A silicon carbide product having a surface with a concentration of metal impurities equal to or less than 1×1011 (atoms/cm2).
A silicon carbide product cleaning method comprising the step of immersing silicon carbide in an acid to reduce surface metal impurities to 1×1011 (atoms/cm2) or less.
A method of manufacturing a silicon carbide product comprising the step of cleaning silicon carbide with an acid to reduce surface metal impurities to 1×1011 (atoms/cm2) or less.
Dependencies are inferred from the claim text.