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US 2006/0234032 A1Published application
Deposition of layers on substrates
AssigneeCambridge Enterprise Limited
InventorsFinlay Morrison, James Scott
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AssigneeCambridge Enterprise Limited
InventorsFinlay Morrison, James Scott
Estimating the term…
According to the invention we provide a process for filling or lining the pores of a porous silicon, silica or alumina substrate with a material which exhibits voltage-dependent index of refraction n comprising providing precursors for the deposited material as a precursor solution, forming a fine mist of droplets of precursor solution and applying the droplets to the porous substrate. The invention provides for the first time porous silicon, silica and alumina substrates having fill fraction at least 60%. Fill fractions of close to 100% can be achieved. When provided with top and bottom electrodes, filled porous silicon, silica and alumina wafers can be used as voltage-dependent photonic devices. The same process can be used for lining trenches in the surface of a silicon substrate, for instance for use in production of microelectronic devices such as random access memories.
A process of depositing material having a voltage-dependent index of refraction n in the pores of a porous silicon, silica or alumina substrate, comprising providing a precursor solution containing precursors for the material to be deposited, forming the precursor solution into fine droplets and contacting the fine droplets with the porous substrate to effect deposition of the precursor solution in the pores.
A crystal formed from porous silicon, silica or alumina in which the pores are filled with a material having a voltage-dependent index of refraction n and wherein the fill fraction is at least 60%.
A voltage-tunable photonic device which is a porous silicon, silica or alumina substrate in which the pores are filled with material having a voltage-dependent index of refraction n and wherein the fill fraction is at least 60%, wherein the substrate has upper and lower surfaces and the upper and lower surfaces are each provided with an electrode.
(canceled)
A process of depositing dielectric material on the inside surface of a trench in the surface of a silicon or silica substrate, comprising providing a precursor solution containing precursors for the material to be deposited, forming the precursor solution into fine droplets and contacting the fine droplets with the substrate to effect deposition of the precursor solution on the inside surface of the trench.
A ferroelectric material, comprising bismuth (methoxy methyl propanolate)3 as a bismuth precursor.
Dependencies are inferred from the claim text.