Nanotubes having controlled characteristics and methods of manufacture thereof

A method of forming a plurality of nanotubes, the method comprising:

• providing a substrate having a first surface and a second, opposing surface;
• forming a plurality of recesses, each recess having an opening at the first surface of the substrate and extending thereinto toward the second, opposing surface of the substrate;
• forming a plurality of nanotubes generally within each of the plurality of recesses;
• substantially surrounding the plurality of nanotubes with a supporting material;
• selectively shortening the at least some of the plurality of nanotubes;
• and
• removing the plurality of nanotubes from the supporting material.

A method of forming a semiconductor structure, comprising:

• providing a semiconductor substrate having a first surface and a second, opposing surface;
• forming a dielectric layer over at least a portion of the first surface of the semiconductor substrate;
• forming at least one recess into the dielectric layer extending at least into the first surface of the semiconductor substrate;
• forming a plurality of conductive nanotubes generally within the at least one recess;
• and
• forming a conductive layer over the plurality of conductive nanotubes.

A method of forming a semiconductor device, comprising:

• providing a semiconductor substrate having a first surface and a second, opposing surface;
• forming a dielectric layer over at least a portion of the first surface of the semiconductor substrate;
• forming at least one recess into the dielectric layer extending toward the first surface of the semiconductor substrate;
• positioning a plurality of preformed nanotubes generally within the at least one recess wherein at least one of the preformed nanotubes extends generally from the first surface of the semiconductor substrate at least through the at least one recess;
• affixing the plurality of preformed nanotubes generally within the at least one recess;
• and
• forming a conductive layer over the at least one of the plurality of preformed nanotubes.

A method of forming an intermediate structure, comprising:

• providing a wafer-scale substrate having a first surface and a second, opposing surface;
• forming a dielectric layer over at least a portion of the wafer-scale substrate;
• forming at least one cavity extending into the dielectric layer toward the first surface to an intermediate surface in the dielectric layer;
• forming a plurality of conductive nanotubes extending from the intermediate surface of the at least one cavity;
• depositing a dielectric material between the plurality of conductive nanotubes;
• and
• selectively shortening at least some of the plurality of conductive nanotubes.

An intermediate semiconductor structure, comprising:

• a semiconductor substrate having a first surface and a second, opposing surface;
• an insulative layer formed over at least a portion of the semiconductor substrate;
• a plurality of recesses extending at least partially through the insulative layer;
• and
• a plurality of nanotubes within each recess of the plurality of recesses.

A system, comprising:

• at least one input device;
• at least one output device;
• and
• a computing device including at least one semiconductor device, comprising:
• a semiconductor substrate having a first surface and a second, opposing surface;
• an insulative layer formed over at least a portion of the semiconductor substrate;
• at least one recess extending at least partially through the insulative layer;
• and
• a plurality of nanotubes within the at least one recess.

A method of forming a plurality of nanotubes, the method comprising:

• providing a substrate having a first surface and a second, opposing surface;
• forming a plurality of recesses each having an opening at the first surface of the substrate and extending thereinto toward the second, opposing surface of the substrate;
• forming a plurality of nanotubes generally within each of the plurality of recesses;
• substantially surrounding the plurality of nanotubes with a supporting material;
• and
• selectively shortening at least some of the plurality of nanotubes.