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US 2006/0233082 A1Published application
Three-dimensional memory devices and methods of manufacturing and operating the same
AssigneeMacronix International Co., Ltd.
InventorsMing Lee, Yen Shih
Life of this patent
Estimating the term…
Abstract
Three-dimensional memory devices and methods of manufacturing and operating the same are disclosed. A memory device includes a plurality of planes of memory arrays, each memory array including a plurality of memory cells. The memory device also includes a plurality of word lines and bit lines coupled to the memory cells in each plane, and at least one transistor to select at least one of the memory arrays.
Claims17
A memory device comprising:
- a plurality of planes of memory arrays, each memory array including a plurality of memory cells;
- a plurality of word lines and bit lines coupled to the memory cells in each plane;
- and
- at least one transistor to select at least one of the memory arrays.
1 more element
A method of accessing memory cells, comprising:
- sending a first signal to at least one layer select transistor;
- activating the at least one select transistor based on the first signal;
- and
- communicating signals to or from one or more memory cells based on the activated at least one select transistor.
1 more element
A memory device comprising:
- at least two layers of memory arrays each containing at least four memory cells;
- at least two word lines in each layer coupled with the memory cells of the corresponding layer;
- at least two bit lines in each layer coupled with the memory cells of the corresponding layer;
- and
- at least a set of layer-selecting transistors for each layer, each set of the layer-selecting transistors being coupled to the memory cells of the corresponding layer.
2 more elements
Dependencies are inferred from the claim text.