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US 2006/0233019 A1Published application
Reading phase change memories without triggering reset cell threshold devices
AssigneeOvonyx, Inc.
InventorsSergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj, Ward Parkinson
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Abstract
A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.
Claims30
A method comprising:
- reading a memory cell including a phase change memory element and a chalcogenide select device that does not change phase, by only thresholding said select device when said memory element is set and not thresholding said select device when said memory element is reset.
A memory comprising:
- an array of phase change memory cells including an address line coupled to said cells and said cells including memory elements coupled to select devices that do not change phase;
- and
- a sense amplifier to sense said addressed line, said sense amplifier to sense said address line without thresholding the select device of a reset cell.
A system comprising:
- a processor;
- a battery coupled to said processor;
- and
- a memory including an array of phase change memory cells having an address line coupled to a cell, said cell including a chalcogenide memory element and a chalcogenide select device that does not change phase, said memory including a circuit to sense the state of said cell when reset without thresholding said select device.
1 more element
Dependencies are inferred from the claim text.