Non-volatile memory device having toggle cell
AssigneeRenesas Technology Corp.
InventorHiroaki Tanizaki
Life of this patent
Estimating the term…
Abstract
A tunneling magneto-resistance element is arranged on an upper layer side of a digit line. The tunneling magneto-resistance element is electrically coupled to a source/drain region of an access transistor through a strap and a contact hole. A bit line is electrically coupled to the tunneling magneto-resistance element, and arranged on the upper layer side of the tunneling magneto-resistance element. A plurality of tunneling magneto-resistance elements share one access transistor, so that a non-volatile memory device achieving low area penalty and higher integration can be implemented.
Claims13
A non-volatile memory device, comprising:
- a plurality of memory cells arranged in matrix of rows and columns;
- a plurality of bit lines provided corresponding to memory cell columns respectively and supplied with a first data write current in data writing, each of said memory cells including a plurality of magneto-resistance elements each performing magnetically non-volatile data storage and a switch commonly controlling electrical connection between a corresponding bit line and a fixed voltage through each said magneto-resistance element;
- and
- a plurality of digit lines corresponding to said plurality of magneto-resistance elements respectively and supplied with a second data write current in said data writing;
- wherein
- each said magneto-resistance element includes a fixed magnetic layer arranged along an easy axis at a prescribed angle to said corresponding bit line and a corresponding digit line, and
- a free magnetic layer having a magnetic direction reversed with respect to previous data by application of prescribed data write magnetic field, as a result of flow of said first and second data write currents having a prescribed pulse sequence in said corresponding bit line and said corresponding digit line in said data writing.
A non-volatile memory device, comprising:
- a memory cell;
- a read bit line electrically coupled to said memory cell in data reading, each said memory cell including a plurality of stacked magneto-resistance elements each performing magnetically non-volatile data storage and a switch commonly controlling electrical connection between each said magneto-resistance element and said read bit line;
- a plurality of first write current lines corresponding to said plurality of stacked magneto-resistance elements respectively and supplied with a first data write current in data writing;
- and
- a plurality of second write current lines corresponding to said plurality of stacked magneto-resistance elements respectively and supplied with a second data write current in said data writing;
- wherein
- each said magneto-resistance element includes
- a fixed magnetic layer arranged along an easy axis at an angle between said corresponding first and second write current lines, and
- a free magnetic layer having a magnetic direction reversed with respect to previous data by application of prescribed data write magnetic field, as a result of flow of said first and second data write currents having a prescribed pulse sequence in said corresponding first and second write current lines in said data writing.
Dependencies are inferred from the claim text.