Memory cell structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Jen Wang, Chih-Huang Lai, Denny Tang, Wen Lin
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Abstract
A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
Claims20
A memory cell structure, comprising:
- a first conductive line cladded by a plurality of films, comprising at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer, wherein the first and second easy axes are about 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line;
- and
- a storage device adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
A memory cell structure, comprising:
- a first conductive line cladded by a plurality of films, the films comprising:
- a first ferromagnetic layer having a first easy axis and cladding the first conductive line, wherein the first easy axis is parallel to the length of the first conductive line;
- a nano oxide layer cladding the first ferromagnetic layer;
- a synthetic anti-ferromagnetic layer cladding the nano oxide layer, comprising:
- a second ferromagnetic layer having a second easy axis perpendicular to the first easy axis;
- a third ferromagnetic layer having a third easy axis anti-parallel to the second easy axis;
- and
- a non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer;
- and
- a first pinned ferromagnetic layer cladding the synthetic anti-ferromagnetic layer;
- and
- a storage device adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
A memory cell structure, comprising:
- a first conductive line cladded by a plurality of films, comprising at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer, wherein the first and second easy axes are about 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line;
- a second conductive line substantially perpendicular to the first conductive line, cladded by a second ferromagnetic layer having a third easy axis parallel to the length of the second conductive line;
- a second pinned ferromagnetic layer cladding the second ferromagnetic layer;
- and
- a storage device adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
Dependencies are inferred from the claim text.