Embedded capacitor associated with an sram cell
AssigneeSTMicroelectronics S.r.l.
InventorJean-Pierre Schoellkopf
Life of this patent
Estimating the term…
Abstract
The invention concerns a capacitor whereof one first electrode consists of a highly doped active region (D) of a semiconductor component (T) formed on one side of a surface of a semiconductor body, and whereof the second electrode consists of a conductive region (BR) coated with insulation (IL) formed beneath said active region and embedded in the semiconductor body.
Claims10
A capacitor having a first electrode formed of a heavily-doped active region of a semiconductor component formed on the side of a surface of a semiconductor bulk, characterized in that the second electrode formed of a conductive region coated with an insulator formed under said active region and embedded in the semiconductor bulk.
A method for manufacturing a capacitor having a first electrode formed of a heavily-doped active region of a semiconductor component, comprising:
- a/forming at the surface of an initial semiconductor substrate a conductive region coated with an insulator;
- b/growing by epitaxy a semiconductor layer to cover the initial substrate and bury the coated region;
- c/forming said heavily-doped active region across the entire thickness of said semiconductor layer, above a portion of the coated conductive region.
Dependencies are inferred from the claim text.