Radio frequency power amplifier
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMotoyoshi Iwata, Hiroyasu Takehara, Hiroyuki Yamauchi
Life of this patent
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Abstract
There are provided an RF power amplifier transistor (2), a bias supply circuit (51) which supplies a bias current to the base of the RF power amplifier transistor and a bias control circuit (52) connected between the base of the RF power amplifier transistor and bias supply circuit, and the bias control circuit is connected to the power supply (32) of the RF power amplifier transistor, thus realizing high efficiency of the RF power amplifier when the power level is low and improving the temperature characteristic of the power amplifier when the power level is low.
Claims18
An RF power amplifier comprising:
- an RF power amplifier transistor;
- a bias supply circuit for supplying a bias current to a base of the RF power amplifier transistor;
- and
- a bias control circuit connected between the base of the RF power amplifier transistor and the bias supply circuit, wherein
- the bias control circuit is constructed so as to control the bias current of the RF power amplifier transistor in accordance with a power supply voltage of the RF power amplifier transistor.
An RF power amplifier comprising:
- an RF power amplifier transistor;
- a bias supply circuit for supplying a bias current to a base of the RF power amplifier transistor;
- and
- a bias control circuit connected between the base of the RF power amplifier transistor and the bias supply circuit, wherein
- the bias control circuit is constructed so as to control the bias current of the RF power amplifier transistor in accordance with a power supply voltage of the RF power amplifier transistor, and
- the bias control circuit comprises a bias control transistor having a collector connected between the output of the bias supply circuit and the base of the RF power amplifier transistor, and an inverter transistor having a collector connected to the base of the bias control transistor, the base of the inverter transistor being connected to the power supply of the RF power amplifier transistor.
RF power amplifier comprising:
- an RF power amplifier transistor;
- a bias supply circuit for supplying a bias current to a base of the RF power amplifier transistor;
- and
- a bias control circuit connected between the base of the RF power amplifier transistor and the bias supply circuit, wherein
- the bias control circuit is constructed so as to control the bias current of the RF power amplifier transistor in accordance with a power supply voltage of the RF power amplifier transistor, and
- the bias control circuit comprises a bias control transistor having a collector connected between the output of the bias supply circuit and the base of the RF power amplifier transistor, an inverter transistor having a collector connected to the base of the bias control transistor, and a transistor having an emitter connected to the base of the inverter transistor, the collector of the transistor being connected to the power supply of the RF power amplifier transistor so as to apply a power control signal to the base of the transistor.
A multi-stage RF power amplifier comprising a plurality of RF power amplifiers connected in a plurality of stages, wherein
- at least one of the plurality of RF power amplifiers comprising:
- an RF power amplifier transistor;
- a bias supply circuit for supplying a bias current to a base of the RF power amplifier transistor;
- and
- a bias control circuit connected between the base of the RF power amplifier transistor and the bias supply circuit,
- the bias control circuit being configured so as to control the bias current of the RF power amplifier transistor in accordance with a power supply voltage of the RF power amplifier transistor.
Dependencies are inferred from the claim text.