Light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTakeshi Noda
Life of this patent
Estimating the term…
Abstract
It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.
Claims30
A light-emitting device comprising:
- a first electrode comprising a first layer and a second layer;
- a layer formed over the first electrode;
- and
- a second electrode formed over the layer,
- wherein the first layer is formed over the second layer,
- wherein the layer comprises a mixture region comprising a metal oxide,
- wherein the mixture region is in contact with the first layer, and
- wherein the first layer comprises a refractory metal material.
A light-emitting device comprising:
- a first electrode comprising a first layer and a second layer;
- a layer formed over the first electrode;
- and
- a second electrode having reflectiveness formed over the layer,
- wherein the first layer is formed over the second layer,
- wherein the layer comprises a mixture region comprising a metal oxide,
- wherein the mixture region is in contact with the first layer,
- wherein the first layer comprises a refractory metal material, and
- wherein the second electrode has a film thickness that transmits light from the layer.
A light-emitting device having at least first, second and third light-emitting elements, each of the first, second and third light-emitting elements comprising:
- a first electrode comprising a first layer and a second layer;
- a layer formed over the first electrode;
- and
- a second electrode formed over the layer,
- wherein the first layer is formed over the second layer,
- wherein the layer comprises a mixture region comprising a metal oxide,
- wherein the mixture region is in contact with the first layer,
- wherein the first layer comprises a refractory metal material,
- wherein the first light-emitting element emits red light, the second light-emitting element emits green light, and the third light-emitting element emits blue light, and
- wherein a film thickness of the mixture region of each of the first, second and third light-emitting elements is different.
A light-emitting device comprising:
- a semiconductor film formed over an insulating substrate;
- an electrode connected to an impurity region in the semiconductor film;
- a first electrode comprising a first layer and a second layer, the first electrode being connected to the electrode;
- a layer formed over the first electrode;
- and
- a second electrode formed over the layer,
- wherein the first layer is formed over the second layer,
- wherein the layer comprises a mixture region comprising a metal oxide,
- wherein the mixture region is in contact with the first layer, and
- wherein the first layer comprises a refractory metal material.
Dependencies are inferred from the claim text.