Integrated circuit system for bonding
AssigneeSTATS ChipPAC, Ltd.
InventorsYaojian Lin, Byung Tai Do, Wan Lay Looi, Haijing Cao
Life of this patent
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Abstract
An integrated circuit system provides a precursor for an integrated wire bond and flip chip structure. The precursor has a plurality of contact pads thereon. A layer of titanium is deposited on the precursor. A layer of nickel-vanadium is deposited on the layer of titanium. A layer of copper is deposited on the layer of nickel-vanadium. A mask is formed on at least a portion of the layer of copper. Portions of the layers of copper and nickel-vanadium not protected by the mask are removed to expose portions of the layer of titanium. The exposed portions of the layer of titanium are etched with an etching solution consisting of an etchant, a viscosity modifier, and an oxidizer.
Claims20
An integrated circuit system, comprising:
- providing a precursor for an integrated wire bond and flip chip structure, the precursor having a plurality of contact pads thereon;
- depositing a layer of titanium on the precursor;
- depositing a layer of nickel-vanadium on the layer of titanium;
- depositing a layer of copper on the layer of nickel-vanadium;
- forming a mask on at least a portion of the layer of copper;
- removing portions of the layers of copper and nickel-vanadium not protected by the mask to expose portions of the layer of titanium;
- and
- etching the exposed portions of the layer of titanium with an etching solution consisting of an etchant, a viscosity modifier, and an oxidizer.
An integrated circuit system, comprising:
- providing a precursor for an integrated wire bond and flip chip semiconductor structure, the precursor having a passivation layer and a plurality of exposed contact pads thereon;
- depositing a layer of titanium on the precursor;
- depositing a layer of nickel-vanadium on the layer of titanium;
- depositing a layer of copper on the layer of nickel-vanadium;
- forming a photomask on a portion of the layer of copper over one of the contact pads;
- etching portions of the layers of copper and nickel-vanadium not protected by the photomask to expose and leave behind corresponding portions of the layer of titanium;
- etching and removing the exposed portions of the layer of titanium in the presence of the layers of copper and nickel-vanadium with an etching solution consisting of hydrofluoric acid, a viscosity modifier, and an oxidizer;
- removing the photomask;
- and
- solder bumping the layer of copper over the one contact pad.
An integrated circuit system, comprising:
- a precursor for an integrated wire bond and flip chip structure, the precursor having a plurality of contact pads thereon;
- a layer of titanium on at least a portion of the precursor;
- a layer of nickel-vanadium on the layer of titanium;
- a layer of copper on the layer of nickel-vanadium;
- and
- at least one of the contact pads being characterized by the effect of an etchant solution consisting of an etchant, a viscosity modifier, and an oxidizer.
An integrated circuit system, comprising:
- a precursor for an integrated wire bond and flip chip semiconductor structure, the precursor having a passivation layer and a plurality of exposed contact pads thereon;
- a layer of titanium on at least a portion of the precursor and over at least a first contact pad;
- a layer of nickel-vanadium on the layer of titanium and over at least the first contact pad;
- a layer of copper on the layer of nickel-vanadium and over at least the first contact pad;
- at least one of the contact pads being characterized by the effect, in the presence of the layers of copper and nickel-vanadium, of an etchant solution consisting of hydrofluoric acid, a viscosity modifier, and an oxidizer;
- and
- a solder bump on the layer of copper over the first contact pad.
Dependencies are inferred from the claim text.