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US 2006/0231930 A1Published application
Heat resistant photomask for high temperature fabrication processes
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsSatoru Araki, Robert Beach, Ying Hong, Thomas Leong, Timothy Minvielle, Howard Zolla
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Abstract
A temperature resistant photomask is disclosed which is made from photoresist containing Si, which is exposed to oxygen during Reactive Ion Etching. The temperature resistant photomask may include a secondary mask layer, which may also acts as a release layer, and which may include spin-on polymide. The photoresist containing Si may be exposed to oxygen during Reactive Ion Etching by introducing oxygen and carbon dioxide.
Claims5
A temperature resistant photomask comprising:
- a layer of photoresist containing Si, which is exposed to oxygen during Reactive Ion Etching.
Dependencies are inferred from the claim text.