Semiconductor device and chip-stack semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorsYoshihisa Dotta, Toshio Kimura
Life of this patent
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Abstract
A semiconductor device has multiple power-supply through electrodes, grounding through electrodes, and signal-routing through electrodes made through a semiconductor chip. The power-supply through electrodes, the grounding through electrodes, and the signal-routing through electrodes differ mutually in cross-sectional area. Hence, a semiconductor device and a chip-stack semiconductor device are provided which are capable of preventing the electrodes' resistance from developing excessive voltage drop, heat, delay, and loss, and also from varying from one electrode to the other.
Claims12
1-28. (canceled)
A semiconductor device, comprising:
- a semiconductor chip;
- multiple through electrodes formed in the semiconductor chip linking a front surface to a back surface thereof,
- wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and
- wherein said first through electrode and said second through electrode have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction.
A chip-stack semiconductor device, comprising:
- multiple stacked semiconductor chips,
- each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof,
- wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and
- wherein the first and second through electrodes have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction.
A chip-stack semiconductor device, comprising
- multiple stacked semiconductor chips,
- each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof,
- wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and
- wherein:
- the first and second through electrodes have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction;
- and
- at least one type of the through electrodes is contact through electrodes electrically connected to that semiconductor chip.
A semiconductor device, comprising:
- a semiconductor chip;
- multiple through electrodes formed in the semiconductor chip linking a front surface to a back surface thereof,
- wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and
- wherein said first through electrode and said second through electrode have mutually differing resistances.
Dependencies are inferred from the claim text.