Gate dielectric antifuse circuit to protect a high-voltage transistor
AssigneeMicron Technology, Inc.
InventorsKenneth Marr, John Porter
Life of this patent
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Abstract
According to embodiments of the present invention, circuits have elements to protect a high-voltage transistor in a gate dielectric antifuse circuit. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a second terminal, and a high-voltage transistor is coupled to the antifuse and has a gate terminal. An intermediate voltage between the supply voltage and the elevated voltage is coupled to the gate terminal of the high-voltage transistor to protect the high-voltage transistor.
Claims20
An antifuse circuit, comprising:
- a bus;
- an antifuse including a first node connected to the bus;
- a transistor connected to the antifuse, the transistor including a gate;
- and
- a gate control circuit connected to the gate, wherein the gate control circuit includes a first impedance connected to the bus and the gate and a second impedance connected between a supply voltage and the gate.
An antifuse integrated circuit, comprising:
- a bus;
- an antifuse including a first node connected to the bus;
- a high voltage, first transistor connected to the antifuse, the first transistor including a gate;
- a gate control circuit connected to the gate, wherein the gate control circuit includes a first impedance connected to the bus and the gate and a second impedance connected between a supply voltage and the gate;
- and
- a second transistor coupled to the high-voltage, first transistor to control current flowing through the antifuse and the high-voltage, first transistor.
An antifuse circuit, comprising:
- a bus;
- an antifuse including a first node connected to the bus;
- a high voltage, first transistor including a first source/drain connected to the antifuse, the first transistor including a gate;
- a gate control circuit connected to the gate, wherein the gate control circuit includes a first impedance connected to the bus and the gate and a second impedance connected between a supply voltage and the gate;
- and
- a read circuit coupled to the high-voltage transistor to read the antifuse during an active mode.
Dependencies are inferred from the claim text.