Process for high voltage superjunction termination
AssigneeThird Dimension (3D) Semiconductor, Inc.
InventorsFwu-Iuan Hshieh, Brian Pratt
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.
Claims20
A method of manufacturing a semiconductor device having an active region and a termination region surrounding the active region, the method comprising:
- providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate having a heavily doped region of a first conductivity type at the second main surface and having a lightly doped region of the first conductivity type at the first main surface;
- forming a first plurality of trenches and a first plurality of mesas in the termination region, each trench of the first plurality of trenches extending from the first main surface toward the heavily doped region to a first depth position;
- filling the first plurality of trenches in the termination region which is outside and adjacent to the active region with a dielectric material;
- forming a second plurality of trenches in the termination region, each trench of the second plurality of trenches extending from the first main surface toward the heavily doped region to a second depth position;
- and
- filling the second plurality of trenches with a dielectric material.
A method of manufacturing a semiconductor device having an active region and a termination region surrounding the active region, the method comprising:
- providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate having a heavily doped region of a first conductivity type at the second main surface and having a lightly doped region of the first conductivity type at the first main surface;
- forming a trench in the termination region, the trench extending from the first main surface toward the heavily doped region to a first depth position, the trench being greater than 20 micrometers wide;
- and
- filling the trench in the termination region with an oxide material.
A method of manufacturing a semiconductor device having an active region and a termination region surrounding the active region, the method comprising:
- providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate having a heavily doped region of a first conductivity type at the second main surface and having a lightly doped region of the first conductivity type at the first main surface;
- forming a plurality of trenches and a plurality of mesas in the termination region, each trench of the plurality of trenches extending from the first main surface toward the heavily doped region to a first depth position;
- oxidizing the plurality of mesas in the termination region until the plurality of mesas are sufficiently converted to an oxide material;
- and
- filling the plurality of trenches in the termination region with an oxide.
A method of manufacturing a semiconductor device having an active region and a termination region surrounding the active region, the method comprising:
- providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate having a heavily doped region of a first conductivity type at the second main surface;
- providing an oxide substrate having first and second main surfaces opposite to each other;
- bonding/annealing the second main surface of the oxide substrate to the first main surface of the semiconductor substrate;
- forming a trench in the oxide substrate proximate the active region, the trench extending from the first main surface of the oxide substrate to the first main surface of the semiconductor substrate;
- and
- filling the trench with an epitaxial layer.
The method according to claim 19, further comprising:
- implanting at least a portion of a column proximate the first main surface with a dopant of the first conductivity, the implanted portion of the column forming a gate region.
Dependencies are inferred from the claim text.