Method of manufacturing and image device

A method of manufacturing an imaging device, comprising:

• forming a buffer layer on a substrate, the buffer layer including an underlying layer made of LaAlO3;
• forming a bolometer film made of a compound which undergoes metal-insulator transition, on the buffer layer, the bolometer film directly contacting the underlying layer;
• forming a switching element on the substrate after forming the bolometer film;
• and
• forming a metal wiring to connect the bolometer film to the switching element after forming the bolometer film,
• wherein the compound is expressed by RNiO3-d, where R is at least one element selected from Pr, Nd, Sm, Eu and Bi, and d is a value showing deviation from stoichiometry.

A method of manufacturing an imaging device, comprising:

• forming a buffer layer on a substrate, the buffer layer including an underlying layer made of LaAlO3;
• forming a bolometer film made of a compound which undergoes metal-insulator transition, on the buffer layer, the bolometer film directly contacting the underlying layer;
• forming a switching element on the substrate after forming the bolometer film:
• and
• forming a metal wiring to connect the bolometer film to the switching element after forming the bolometer film,
• wherein the compound is expressed by Ca2-xSrxRuO4-d, where d is a value showing deviation from stoichiometry, and x ranges from 0, inclusive, to 0.05, inclusive, or by Ca2-x′RuO4-d′, where d′ is a value showing deviation from stoichiometry, and x′ is greater than 0 and smaller than 0.32.