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US 2006/0231908 A1Published application
Multilayer gate dielectric
AssigneeXerox Corporation
InventorsPing Liu, Yiliang Wu, Beng Ong
Life of this patent
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Abstract
An electronic device composed of: a multilayer dielectric including: (i) a first layer composed of a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material.
Claims11
An electronic device comprising:
- a multilayer dielectric comprising:
- (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material.
A thin film transistor comprising:
- (a) a semiconductor layer;
- and
- (b) a multilayer gate dielectric comprising:
- (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.
1 more element
A thin film transistor comprising:
- (a) a semiconductor layer;
- (b) a gate electrode;
- (c) a source electrode in contact with the semiconductor layer;
- (d) a drain electrode in contact with the semiconductor layer;
- and
- (e) a multilayer gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the multilayer dielectric comprises:
- (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.
4 more elements
11-20. (canceled)
Dependencies are inferred from the claim text.