Electronic device comprising a field effect transistor for high-frequency aplications
AssigneeNXP B.V.
InventorsThomas Roedle, Hendrikus Jos, Stephan Theeuwen, Petra Hammes, Radjindrepersad Gajadharsing
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Abstract
An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.
Claims10
An electronic device comprising a field effect transistor provided with a plurality of parallel-connected transistor segments having mutually different threshold voltages, characterized in that each of the transistor segments comprises a first region and a second region, the first region having a first threshold voltage and the second region having a second threshold voltage.
Dependencies are inferred from the claim text.