CMOS image sensor and method of manufacturing the same

A CMOS image sensor comprising:

• a semiconductor substrate having photodiodes and transistors;
• an interlayer insulating layer formed on the resultant structure having the photodiodes and transistors;
• molding portions formed on the interlayer insulating layer, and composed of an light blocking material to surround peripheries of the photodiodes;
• a floatable oxide layer formed on the interlayer insulating layer having the molding portions, and having indented portions formed by steps of the molding portions;
• and
• inner lenses formed within the indented portions of the floatable oxide layer.

A CMOS image sensor comprising:

• a semiconductor substrate including a plurality of unit pixels having photodiodes and transistors;
• an interlayer insulating layer formed on the semiconductor substrate;
• molding portions formed on an upper surface of the interlayer insulating layer, and surrounding the photodiodes per unit pixels;
• a floatable oxide layer formed on an upper surface of the interlayer insulating layer, and having indented portions defined by the molding portions;
• inner lenses respectively formed in the indented portions;
• and
• R, G and B color filters formed on an upper surface of the semiconductor substrate having the inner lenses, and arranged under a prescribed rule to correspond to the inner lenses,
• wherein the molding portions are formed to allow areas of the photodiode regions exposed by the molding portions to be increased in order of the R, G and B filters, thereby increasing apertures and curvatures of the inner lenses in order of the R, G and B filters.

A method of manufacturing a CMOS image sensor comprising:

• providing a semiconductor substrate having photodiodes and transistors;
• forming an interlayer insulating layer on an upper surface of the resultant structure having photodiodes and transistors;
• forming molding portions on the interlayer insulating layer to surround the peripheries of the photodiodes;
• and
• forming a floatable oxide layer on the interlayer insulating layer having the molding portions, and having indented portions corresponding to the photodiodes.