Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles

A method, comprising:

• fabricating a two-terminal solid-state memory device by:
• forming a dielectric layer on a semiconductor substrate;
• introducing nanocrystals and/or nanoparticles substantially throughout the dielectric layer;
• and
• forming a gate electrode gate electrode on the dielectric layer.

An apparatus comprising:

• a flexible two-terminal organic memory device based on nanocrystals and/or nanoparticles having:
• a flexible substrate;
• an organic semiconductor layer or conductive organic layer disposed on the substrate;
• an organic insulating layer disposed on the semiconductor or conductive organic layer;
• a plurality of nanocrystals and/or nanoparticles embedded throughout the organic insulating layer;
• and
• a conductive organic gate electrode disposed on the organic insulating layer.

A method comprising:

• operating a two-terminal organic memory device having a first terminal being a gate and a second terminal being an organic conductive or semiconductor film by:
• applying a voltage to the gate;
• charging nanocrystals and/or nanoparticles embedded throughout an insulating layer to a first state in response to the applied voltage, the first state to represent an “off” state for the memory device;
• and
• discharging the nanocrystals and/or nanoparticles embedded throughout the insulating layer to a second state, the second state to represent an “on” state for the memory device.

A method, comprising:

• fabricating a two-terminal flexible memory device by:
• forming a conductive organic or a organic semiconductor layer on the flexible substrate;
• forming a organic dielectric layer on the conductive organic or organic semiconductor layer;
• and
• introducing nanocrystals and/or nanoparticles into the dielectric layer;
• and depositing conductive organic layer for a gate electrode.