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US 2006/0231887 A1Published application
Memory device having serially connected resistance nodes
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-Joo Kim, Yoon-dong Park
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Abstract
A memory device may include a plurality of resistance nodes. The resistance nodes may be connected serially in a NAND or AND structure, by a plurality of metal plugs. The metal plugs may have a lower resistance. A control device corresponding to each resistance node may control the resistance devices. Each control device may be connected to a bit line and a word line. The bit line may be connected to the metal plugs via a corresponding switch device.
Claims20
A memory device comprising:
- a plurality of resistance nodes each including a first terminal and a second terminal and having resistance characteristics that vary according to an applied voltage;
- a plurality of metal plugs, each metal plug being arranged between a first terminal of one of the plurality of resistance nodes and a second terminal of another of the plurality of resistance nodes, the metal plugs having lower resistances than the plurality of resistance nodes;
- a control device corresponding to each of the plurality of resistance nodes, each control device including a first, second and third terminal, the third terminal controlling current flow between the first and second terminals;
- a bit line serially connecting the control devices;
- a switch device arranged between the bit line and each metal plug, each switch device controlling current flow between the bit line and a corresponding metal plug;
- and
- a word line connected to a third terminal of each control device.
4 more elements
Dependencies are inferred from the claim text.