Back to results
US 2006/0231882 A1Published application
Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Harry Tuller
Life of this patent
Estimating the term…
Abstract
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
Claims22
A low voltage operating thin film transistor (TFT) structure comprising:
- a source electrode;
- a drain electrode;
- a gate electrode;
- and
- a gate insulator that is coupled to said source electrode, drain electrode, and gate electrode, said gate insulator including room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
2 more elements
A method of forming a thin film transistor (TFT) structure comprising:
- forming a source electrode;
- forming a drain electrode;
- forming a gate electrode;
- and
- forming a gate insulator that is coupled to source electrode, drain electrode, and gate electrode, said gate insulator including room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltages.
2 more elements
Dependencies are inferred from the claim text.