Semiconductor device and method of fabricating the same
OwnerKoji Yamakawa, Soichi Yamazaki +1inventors
InventorsKoji Yamakawa, Soichi Yamazaki, Osamu Hidaka
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Abstract
According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, and a capacitor formed above the semiconductor substrate by sandwiching a dielectric film between a lower electrode and upper electrode, wherein the upper electrode has a stacked structure including a first MOx type conductive oxide film (M is a metal element, O is an oxygen element, and x>0) having a crystal structure, and a crystal grain size of the first MOx type conductive oxide film is 5 to 100 nm.
Claims12
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a capacitor formed above the semiconductor substrate by sandwiching a dielectric film between a lower electrode and upper electrode,
- wherein the upper electrode has a stacked structure including a first MOx type conductive oxide film (M is a metal element, O is an oxygen element, and x>0) having a crystal structure, and a crystal grain size of the first MOx type conductive oxide film is 5 to 100 nm.
A semiconductor device fabrication method comprising:
- forming, above a semiconductor substrate, a lower electrode film which forms a capacitor;
- forming, on the lower electrode film, a dielectric film which forms the capacitor;
- forming, on the dielectric film, a first MOx type conductive oxide film (M is a metal element, O is an oxygen element, and x>0) or ABOx type conductive oxide film (A and B are metal elements, O is an oxygen element, and x>0) serving as an upper electrode film which forms the capacitor;
- crystallizing the first MOx type conductive oxide film or ABOx type conductive oxide film by heating;
- and
- forming a second MOx type conductive oxide film (M is a metal element, O is an oxygen element, and x>0) on the crystallized first MOx type conductive oxide film or ABOx type conductive oxide film.
Dependencies are inferred from the claim text.