CMOS image sensor and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Hoon Park, Sang-Il Jung
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.
Claims18
A CMOS image sensor, comprising:
- a device isolation pattern formed in a substrate to define a diode region and an active region;
- a photodiode formed in the diode region;
- a transfer gate formed adjoining the photodiode on the active region;
- a reset gate and a selection gate serially formed apart from each other on the active region separated from the transfer gate by a predetermined distance;
- a floating diffusion layer formed in the active region between the transfer gate and the reset gate;
- and
- a blocking layer that covers the floating diffusion layer.
A CMOS image sensor, comprising:
- a device isolation pattern formed in a substrate to define a diode region and an active region;
- a photodiode formed in the diode region;
- a transfer gate formed adjoining the photodiode on the active region;
- a reset gate and a selection gate serially formed apart from each other on the active region separated from the transfer gate by a predetermined distance;
- a floating diffusion layer formed in the active region between the transfer gate and the reset gate;
- and
- a patterned blocking layer that covers the photodiode and the floating diffusion layer.
A CMOS image sensor, comprising:
- a device isolation pattern formed in a substrate to define a diode region and an active region;
- a photodiode formed in the diode region;
- a transfer gate formed adjoining the photodiode on the active region;
- a reset gate and a selection gate serially formed apart from each other on the active region separated from the transfer gate by a predetermined distance;
- a floating diffusion layer formed in the active region between the transfer gate and the reset gate;
- and
- a blocking layer that covers the photodiode, the transfer gate, the floating diffusion layer, and at least a portion of the reset gate adjacent the floating diffusion layer.
Dependencies are inferred from the claim text.