Semiconductor device and manufacturing method thereof
AssigneeSanken Electric Co., Ltd.
InventorTetsuya Takahashi
Life of this patent
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Abstract
A semiconductor device has a semiconductor base, an anode electrode, and a cathode electrode. The semiconductor base includes a P type semiconductor substrate, an insulating film, an N− type semiconductor region formed on the insulating film, an N+ type semiconductor region, and a P+ type semiconductor region facing the N+ type semiconductor region via the N− type semiconductor region. The semiconductor device further has an N type diffusion layer which is formed, in the N− type semiconductor region at the interface between the insulating film and the N− type semiconductor region, so as to have a concentration gradient such that the N type impurity concentration increases from the side of the anode electrode to the side of the cathode electrode.
Claims10
A semiconductor device, comprising
- a semiconductor base comprising:
- a substrate;
- an insulating film formed on said substrate;
- a first semiconductor region having a first conductivity type formed on said insulating film;
- a second semiconductor region having the first conductivity type formed on a surface region of said first semiconductor region;
- and a third semiconductor region having a second conductivity type formed on a surface region of said first semiconductor region so as to face said second semiconductor region via said first semiconductor region;
- a first electrode formed on said second semiconductor region of said semiconductor base, and
- a second electrode formed on said third semiconductor region of said semiconductor base,
- wherein said semiconductor device further comprises a diffusion layer on a surface of said first semiconductor region contacting said insulating layer, said diffusion layer having a gradient of concentration of an impurity having the first conductivity type, from a side of said first electrode to a side of said second electrode.
A semiconductor device, comprising
- a semiconductor base comprising:
- a substrate;
- an insulating film formed on said substrate;
- a first semiconductor region having a first conductivity type formed on said insulating film;
- a second semiconductor region having the first conductivity type formed on a surface region of said first semiconductor region;
- a third semiconductor region having a second conductivity type formed on a surface region of said first semiconductor region so as to face said second semiconductor region via said first semiconductor region;
- and a fourth semiconductor region formed in a surface region of said third semiconductor region,
- a gate electrode formed so as to face said third semiconductor region, of said semiconductor base, which is sandwiched between said first semiconductor region and said fourth semiconductor region,
- a first electrode formed on said second semiconductor region of said semiconductor base, and
- a second electrode formed on said third semiconductor region of said semiconductor base,
- wherein said semiconductor device further comprises a diffusion layer on a surface of said first semiconductor region contacting said insulating film, said diffusion layer having a gradient of concentration of an impurity having the first conductivity type, from a side of said first electrode to a side of said second electrode.
A semiconductor device, comprising
- a semiconductor base comprising:
- a substrate;
- an insulating film formed on said substrate;
- a first semiconductor region having a first conductivity type formed on said insulating film;
- and a second semiconductor region having the first conductivity type and a third semiconductor region having a second conductivity type formed so as to adjoin said first semiconductor region and so as to face each other via said first semiconductor region,
- wherein
- a first electrode is formed on said second semiconductor region, and a second electrode is formed on said third semiconductor region, and
- a diffusion layer having the first conductivity type, whose impurity concentration is varied from a side of said first electrode to a side of said second electrode, is formed on said first semiconductor region.
A manufacturing method of a semiconductor device, comprising the steps of:
- preparing a substrate on which an insulating film is formed;
- forming a first semiconductor region having a first conductivity type on said insulating film;
- forming a second semiconductor region having the first conductivity type and a third semiconductor region having a second conductivity type so as to adjoin said first semiconductor region and so as to face each other via said first semiconductor region;
- and
- forming a diffusion layer having the first conductivity type on said first semiconductor region, such that an impurity concentration of said diffusion layer is varied from a side of a first electrode formed on said second semiconductor region to a side of a second electrode formed on said third semiconductor region.
Dependencies are inferred from the claim text.