Method for making a semiconductor device including a memory cell with a negative differential resistance (ndr) device
AssigneeRJ Mears, LLC
InventorRichard Blanchard
Life of this patent
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Abstract
A method for making a semiconductor device may include forming at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto. The NDR device may include a superlattice including a plurality of stacked groups of layers, with each group of layers of the superlattice including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one nonsemiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Claims24
A method for making a semiconductor device comprising:
- forming at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto;
- the NDR device comprising a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
A method for making a semiconductor device comprising:
- forming at least one memory cell comprising a thyristor, a control gate coupled to the thyristor, and an access transistor coupled to the thyristor;
- the thyristor comprising a plurality of stacked semiconductor layers having alternating first and second conductivity types, and at least one layer of the stack of semiconductor layers comprising a superlattice;
- the superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
A method for making a semiconductor device comprising:
- forming a thyristor comprising plurality of stacked semiconductor layers having alternating first and second conductivity types;
- and
- coupling a control gate to the thyristor;
- at least one of the layers of the stack of semiconductor layers comprising a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Dependencies are inferred from the claim text.