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US 2006/0231854 A1Published application
Flip chip type nitride semiconductor light emitting device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsSeung Chae, Suk Yoon, Kun Ko, Hyun Shim, Bong Yi
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Abstract
The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
Claims16
A flip chip type nitride semiconductor light emitting device comprising:
- p-type and n-type semiconductor layers;
- an active layer formed between the p-type and n-type semiconductor layers;
- an ohmic contact layer formed on the p-type nitride semiconductor layer;
- a light-transmitting conductive oxide layer formed on the ohmic contact layer;
- and
- a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
3 more elements
Dependencies are inferred from the claim text.