Semiconductor light-emitting device and its manufacturing method

A manufacturing method of light-emitting device, comprising:

• a substrate forming process in which a semiconductor-substrate is formed by depositing p-type and n-type semiconductor layers on a transparent crystal substrate with a partly non-deposited portion, and by providing semiconductor-surface-electrodes on the semiconductor layers to apply currents into each of the semiconductor layers, wherein each of the electrode surfaces is exposed in one direction;
• VIA forming process in which an insulating layer is formed on the surface of the semiconductor-substrate where the semiconductor-surface-electrodes are provided, also holes for VIA are made by partly removing the insulating layer over the semiconductor-surface-electrodes, also electric conductors are provided to form VIA's on the exposed surfaces of the semiconductor-surface-electrodes exposed by the insulator removals and on the inner walls of the holes for VIA, and also mount-surface-electrodes electrically connected to the semiconductor-surface-electrodes through the VIA are made on the surface of the insulating layer;
• and
• substrate separation process in which the transparent crystal substrate is separated off from the semiconductor layers after the VIA forming process.

A manufacturing method of light-emitting device, comprising:

• a substrate forming process in which a semiconductor-substrate is formed by depositing p-type and n-type semiconductor layers on a transparent crystal substrate with a partly non-deposited portion, and by providing semiconductor-surface-electrodes on the semiconductor layers to apply currents into each of the semiconductor layers, wherein each of the electrode surfaces is exposed in one direction;
• VIA forming process in which an insulating layer having pre-formed holes for VIA corresponding to the semiconductor-surface-electrodes is laminated on the surface of the semiconductor-substrate where the semiconductor-surface-electrodes are provided, also electric conductors are provided to form VIA's on the surfaces of the semiconductor-surface-electrodes and on the inner walls of the holes for VIA, and also mount-surface-electrodes electrically connected to the semiconductor-surface-electrodes through the VIA are made on the surface of the insulating layer;
• and
• substrate separation process in which the transparent crystal substrate is separated off from the semiconductor layers after the VIA forming process.