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US 2006/0231852 A1Published application
Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
AssigneeNichia Corporation
InventorsTakeshi Kususe, Takahiko Sakamoto
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Abstract
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
Claims54
A nitride semiconductor light-emitting device comprising:
- a substrate;
- a layered portion emitting light disposed on the substrate, the layered portion including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;
- and an n electrode,
- wherein the layered portion has an inclined periphery at which the surface of the n-type semiconductor layer is exposed, and the n electrode is disposed on the surface of the n-type semiconductor layer.
1 more element
A nitride semiconductor light-emitting device comprising:
- an n-type nitride semiconductor layer;
- p-type nitride semiconductor layer;
- and a luminescent layer formed of a nitride semiconductor between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer,
- wherein at least the p-type nitride semiconductor layer and the luminescent layer define a frustum layered composite, and the layered composite is embedded in a metal member so that the periphery of the layered composite is isolated.
1 more element
A nitride semiconductor light-emitting device comprising:
- an n-type nitride semiconductor layer;
- p-type nitride semiconductor layer;
- and a luminescent layer formed of a nitride semiconductor between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer,
- wherein at least the p-type nitride semiconductor layer and the luminescent layer define a frustum layered composite, and the layered composite is supported by a metal member opposing the surface of the layered composite.
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A method for manufacturing a light-emitting device, comprising:
- the first step of forming an n-type semiconductor layer, a luminescent layer, and a p-type semiconductor layer on a substrate;
- the second step of forming frustum luminescent regions including the p-type semiconductor layer and the luminescent layer;
- the third step of forming a metal member so as to cover the luminescent layer;
- the fourth step of removing the substrate;
- and
- the fifth step of cutting the metal member between the luminescent regions to separate light-emitting devices from one another.
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A semiconductor light-emitting device comprising a structure including a first conductivity type layer;
- a second conductivity type layer;
- and a luminescent layer between the first and second conductivity type layers,
- wherein at least part of the structure defines a structured portion having a lower surface with a width in sectional view, an upper surface with a smaller width than the width of the lower surface in sectional view, and a inclined periphery, and
- wherein the periphery is defined by first side surfaces, each having a width increasing from the lower surface side toward the upper surface side, and second side surfaces, each having a width increasing from the upper surface side toward the lower surface side.
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A light-emitting apparatus comprising:
- a light-emitting device comprising a structure including a first conductivity type layer;
- a second conductivity type layer;
- and a luminescent layer between the first and second conductivity type layers,
- wherein at least part of the structure defines a structured portion having a lower surface with a width in sectional view, an upper surface with a smaller width than the width of the lower surface in sectional view, and a inclined periphery, and
- wherein the periphery is defined by first side surfaces, each having a width increasing from the lower surface side toward the upper surface side, and second side surfaces, each having a width increasing from the upper surface side toward the lower surface side, and
- a mounting portion on which the light-emitting device is placed, wherein the light emitting device is mounted on a support and then placed on the mounting portion.
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The light-emitting apparatus comprising:
- a light-emitting device comprising a structure including a first conductivity type layer;
- a second conductivity type layer;
- and a luminescent layer between the first and second conductivity type layers,
- wherein at least part of the structure defines a structured portion having a lower surface with a width in sectional view, an upper surface with a smaller width than the width of the lower surface in sectional view, and a inclined periphery, and
- wherein the periphery is defined by first side surfaces, each having a width increasing from the lower surface side toward the upper surface side, and second side surfaces, each having a width increasing from the upper surface side toward the lower surface side, and
- a light-transforming member for transforming part of light emitted from the light-emitting device into light having a different wavelength.
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Dependencies are inferred from the claim text.